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| Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF80N10M SFF80N10Z 55 AMP (note 1) /100 Volts 12 mO N-Channel Trench Gate MOSFET Features: * * * * * * * * * Trench gate technology for high cell density Lowest ON-resistance in the industry Enhanced operating temperature range Hermetically Sealed, Isolated Power Package Low Total Gate Charge Fast Switching Enhanced replacement for IRM150 TX, TXV, S-Level screening available Improved (RDS(ON) QG) figure of merit DESIGNER'S DATA SHEET TO-254, TO254Z Note 1: maximum current limited by package configuration TO-254 (SFF85N10M) TO-254Z (SFF85N10Z) Maximum Ratings Drain - Source Voltage Gate - Source Voltage Max. Continuous Drain Current (package limited) Max. Instantaneous Drain Current (Tj limited) Max. Avalanche current Repetitive Avalanche Energy Total Power Dissipation Operating & Storage Temperature Maximum Thermal Resistance Junction to Case @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ L= 0.1 mH @ L= 0.1 mH @ TC = 25C Symbol VDSS VGS ID1 ID2 ID3 ID4 IAR EAR PD TOP & TSTG R0JC Value 100 20 55 (note 1) 55 (note 1) 110 70 75 280 250 -55 to +200 0.7 (typ 0.55) Units V V A A A mJ W C C/W TO-TO-254 PIN 3 PIN 2 PIN 3 PIN 1 PIN 2 PIN 1 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0019A DOC Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF80N10M SFF80N10Z Symbol VGS = 0V, ID = 250A VGS = 10V, ID = 30A, Tj= 25oC VGS = 10V, ID = 30A, Tj=125oC VGS = 10V, ID = 30A, Tj= 200oC VGS = 10V, ID = 85A, Tj= 25oC VDS = VGS, ID = 250A VGS = 20V VDS = 80V, VGS = 0V, Tj = 25oC VDS = 80V, VGS = 0V, Tj = 125oC VDS = 80V, VGS = 0V, Tj = 200oC VDS = 15V, ID = 30A, Tj = 25oC VGS = 10V VDS = 50V ID = 85A VGS = 10V VDS = 50V ID = 85A RG = 2.5O IF = 50A, VGS = 0V IF = 50A, di/dt = 100A/usec VGS = 0V VDS = 25V f = 1 MHz BVDSS Electrical Characteristics 4/ Drain to Source Breakdown Voltage Min 100 -- -- -- -- 2.0 -- -- -- 23 -- -- -- -- -- -- -- -- -- -- -- -- Typ Max -- 9.5 16 22 10 -- -- -- -- -- 140 40 40 25 115 75 110 1.0 70 5.5 0.2 8700 750 450 -- 12.0 -- -- -- 4.0 100 1 50 10 -- 220 -- -- 35 185 110 160 1.5 150 10 0.35 -- -- -- Units V Drain to Source On State Resistance RDS(on) mO Gate Threshold Voltage Gate to Source Leakage Zero Gate Voltage Drain Current Forward Transconductance Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn off Delay Time Fall Time Diode Forward Voltage Diode Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS(th) IGSS IDSS gfs Qg Q gs Q gd td(on) tr td(off) tf VSD trr IRM(rec) Qrr Ciss Coss Crss V nA A A mA Mho nC nsec V nsec A C pF NOTES: * Pulse Test: Pulse Width = 300sec, Duty Cycle = 2%. 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screening per MIL-PRF-19500. 3/ For Package Outlines Contact Factory. 4/ Unless Otherwise Specified, All Electrical Characteristics @25oC. Available Part Numbers: Consult Factory PIN ASSIGNMENT (Standard) Package Drain Source Gate Pin 1 Pin 2 Pin 3 TO254 Pin 1 Pin 2 Pin 3 TO254Z NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0019A DOC |
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